The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 07, 2017
Filed:
Mar. 04, 2014
Applied Materials, Inc., Santa Clara, CA (US);
Dong-kil Yim, Pleasanton, CA (US);
Tae Kyung Won, San Jose, CA (US);
Seon-Mee Cho, Santa Clara, CA (US);
John M. White, Hayward, CA (US);
APPLIED MATERIALS, INC., Santa Clara, CA (US);
Abstract
The present invention generally relates to TFTs and methods for fabricating TFTs. For either back channel etch TFTs or for etch stop TFTs, multiple layers for the passivation layer or the etch stop layers permits a very dense capping layer to be formed over a less dense back channel protection layer. The capping layer can be sufficiently dense so that few pin holes are present and thus, hydrogen may not pass through to the semiconductor layer. As such, hydrogen containing precursors may be used for the capping layer deposition.