The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 07, 2017
Filed:
Jan. 08, 2016
United Microelectronics Corp., Hsin-Chu, TW;
Ling-Chun Chou, Yun-Lin County, TW;
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Abstract
The present invention provides a method of forming a semiconductor device including following steps. Firstly, a fin shaped structure is formed on a substrate, and a gate structure is formed to be across the fin shaped structure. Next, a dielectric layer is formed on the substrate, covering the gate structure, and a gate electrode of the gate structure is removed, to form a first gate trench. Then, a threshold voltage implantation process and a compensated threshold voltage implantation process are sequentially performed in the first gate trench, to implant compensated two dopants respectively. Following these, a work function layer and a conductive layer are formed to fill the first gate trench.