IDiyas

For the Inventor, By the Inventor

The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9590050 B1

PDFFull Text
Date of Patent:
Mar. 07, 2017

Filed:

Dec. 19, 2014

Crystalline multilayer structure and semiconductor device

Applicant:

Flosfia Inc., Kyoto-shi, Kyoto, JP;

Inventors:

Toshimi Hitora, Kyoto, JP;

Masaya Oda, Kyoto, JP;

Akio Takatsuka, Kyoto, JP;

Assignee:

FLOSFIA, INC., Kyoto, JP;

Attorney:

Christensen O'Connor Johnson Kindness PLLC

Primary Examiner:

Zandra Smith

Assistant Examiner:

Evan Clinton

Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 29/22 (2006.01); H01L 33/28 (2010.01); H01L 21/02 (2006.01); H01L 29/772 (2006.01); H01L 29/778 (2006.01); H01L 29/812 (2006.01); H01L 29/04 (2006.01); H01L 29/24 (2006.01); H01L 29/66 (2006.01); H01L 29/808 (2006.01); H01L 29/872 (2006.01); H01L 29/10 (2006.01); H01L 33/26 (2010.01); H01L 33/42 (2010.01);
U.S. Cl.
CPC ...
H01L 29/22 (2013.01); H01L 21/0257 (2013.01); H01L 21/0262 (2013.01); H01L 21/02491 (2013.01); H01L 21/02565 (2013.01); H01L 29/04 (2013.01); H01L 29/1066 (2013.01); H01L 29/24 (2013.01); H01L 29/66969 (2013.01); H01L 29/7722 (2013.01); H01L 29/7786 (2013.01); H01L 29/8083 (2013.01); H01L 29/812 (2013.01); H01L 29/872 (2013.01); H01L 33/28 (2013.01); H01L 33/26 (2013.01); H01L 33/42 (2013.01); H01L 2933/0016 (2013.01);
Abstract

Provided is a crystalline multilayer structure having good semiconductor properties. In particular, the crystalline multilayer structure has good electrical properties as follows: the controllability of conductivity is good; and vertical conduction is possible. A crystalline multilayer structure includes a metal layer containing a uniaxially oriented metal as a major component and a semiconductor layer disposed directly on the metal layer or with another layer therebetween and containing a crystalline oxide semiconductor as a major component. The crystalline oxide semiconductor contains one or more metals selected from gallium, indium, and aluminum and is uniaxially oriented.

Find Patent Forward Citations

Loading…