The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 07, 2017
Filed:
Dec. 20, 2013
Applicant:
United Microelectronics Corp., Hsinchu, TW;
Inventor:
Wei-Shan Liao, Yunlin County, TW;
Assignee:
UNITED MICROELECTRONICS CORP., Hsinchu, TW;
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/735 (2006.01); H01L 29/08 (2006.01); H01L 29/66 (2006.01); H01L 29/732 (2006.01); H01L 29/06 (2006.01); H01L 29/10 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0821 (2013.01); H01L 29/0692 (2013.01); H01L 29/10 (2013.01); H01L 29/66272 (2013.01); H01L 29/732 (2013.01);
Abstract
A semiconductor structure and a method for forming same are provided. The semiconductor structure includes a bipolar transistor. The bipolar transistor includes a base doped contact, an emitter doped contact, a collector doped contact, and well regions. The base doped contact, the emitter doped contact and the collector doped contact are formed in the different well regions having different dopant conditions from each other.