The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 07, 2017

Filed:

Nov. 19, 2014
Applicant:

Macronix International Co., Ltd., Hsinchu, TW;

Inventor:

Shih-Ping Hong, Taichung, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/115 (2006.01); H01L 29/423 (2006.01); H01L 29/51 (2006.01); H01L 21/28 (2006.01);
U.S. Cl.
CPC ...
H01L 27/11578 (2013.01); H01L 21/28273 (2013.01); H01L 21/28282 (2013.01); H01L 27/1157 (2013.01); H01L 27/11524 (2013.01); H01L 27/11551 (2013.01); H01L 29/4234 (2013.01); H01L 29/511 (2013.01);
Abstract

A memory device is described, which includes a block of memory cells comprising a plurality of stacks of horizontal active lines such as NAND string channel lines, with a plurality of vertical slices penetrated by, and surrounding, the horizontal active lines to provide a gate-all-around structure. A memory film is disposed between the horizontal active lines in the plurality of stacks and the vertical slices in the plurality of vertical slices. A 3D, horizontal channel, gate-all-around NAND flash memory is provided. A method for manufacturing a memory involves a buttress process. The buttress process enables horizontal channel, gate-all-around structures.


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