The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 07, 2017
Filed:
Aug. 02, 2016
United Microelectronics Corp., Hsin-Chu, TW;
Yuan-Heng Tseng, Pingtung County, TW;
Chih-Shan Wu, Tainan, TW;
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Abstract
An antifuse one-time programmable (OTP) memory cell includes a semiconductor substrate, an isolation region, and a fin structure protruding from a top surface of the isolation region. The fin structure has an end portion with a sidewall surface above the top surface. A select gate transistor is disposed on the fin structure. The select gate transistor has a select gate traversing the fin structure, a select gate dielectric layer, a drain region, and a source region. A vertical program gate transistor is serially connected to the select gate transistor through the source region. The vertical program gate transistor has a program gate directly disposed on the isolation region and covering the sidewall surface of the end portion, and a program gate dielectric layer between the program gate and the sidewall surface.