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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9589918 B1

PDFFull Text
Expired
Date of Patent:
Mar. 07, 2017

Filed:

Oct. 07, 2015

Memory device structure

Applicant:

Ovonyx Memory Technology, Llc, Alexandria, VA (US);

Inventors:

John Moore, Boise, ID (US);

Joseph F. Brooks, Boise, ID (US);

Assignee:

OVONYX MEMORY TECHNOLOGY, LLC, Alexandria, VA (US);

Attorney:

Holland & Hart LLP

Primary Examiner:

Dung Le

Int. Cl.
CPC ...
H01L 21/4763 (2006.01); H01L 23/00 (2006.01); H01L 27/24 (2006.01); H01L 45/00 (2006.01); H01L 23/522 (2006.01); H01L 23/532 (2006.01);
U.S. Cl.
CPC ...
H01L 24/05 (2013.01); H01L 23/5226 (2013.01); H01L 23/53257 (2013.01); H01L 24/03 (2013.01); H01L 27/24 (2013.01); H01L 45/1675 (2013.01); H01L 2224/0555 (2013.01); H01L 2224/05147 (2013.01); H01L 2224/05647 (2013.01); H01L 2224/05655 (2013.01); H01L 2924/01006 (2013.01); H01L 2924/01012 (2013.01); H01L 2924/01013 (2013.01); H01L 2924/01014 (2013.01); H01L 2924/01016 (2013.01); H01L 2924/01028 (2013.01); H01L 2924/01029 (2013.01); H01L 2924/01032 (2013.01); H01L 2924/01033 (2013.01); H01L 2924/01047 (2013.01); H01L 2924/01052 (2013.01); H01L 2924/01073 (2013.01); H01L 2924/01074 (2013.01); H01L 2924/01078 (2013.01); H01L 2924/01082 (2013.01); H01L 2924/01084 (2013.01); H01L 2924/05042 (2013.01); H01L 2924/14 (2013.01); H01L 2924/1443 (2013.01); H01L 2924/19041 (2013.01); H01L 2924/2064 (2013.01);
Abstract

A memory device structure includes circuitry formed over a substrate and at least one insulating portion formed over said circuitry, each of which includes a plurality of openings. The memory device also includes a plurality of electrical connections formed in respective openings of the plurality of openings of the at least one insulating portion, at least one bond pad formed within at least one of the at least one insulating portion, and a cap formed over the at least one bond pad.

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Quick Actions:

Moore, John. (2017). Memory device structure (U.S. Patent No. 9589918). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9589918

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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