The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 07, 2017
Filed:
Jul. 30, 2015
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Cheng-Ta Wu, Chiayi County, TW;
Shiu-Ko Jangjian, Tainan, TW;
Chung-Ren Sun, Kaohsiung, TW;
Ming-Te Chen, Hsinchu, TW;
Ting-Chun Wang, Tainan, TW;
Jun-Jie Cheng, Hualien County, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Abstract
A semiconductor device includes a semiconductor fin, a lining oxide layer, a silicon nitride based layer and a gate oxide layer. The semiconductor fin has a top surface, a first side surface adjacent to the top surface, and a second side surface which is disposed under and adjacent to the first side surface. The lining oxide layer peripherally encloses the second side surface of the semiconductor fin. The silicon nitride based layer is disposed conformal to the lining oxide layer. The gate oxide layer is disposed conformal to the top surface and the first side surface.