The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 07, 2017
Filed:
Jan. 13, 2016
Asml Netherlands B.v., Veldhoven, NL;
Jeroen van der Burgt, Eindhoven, NL;
Matthew R. Graham, San Diego, CA (US);
Charles Kinney, San Diego, CA (US);
Wayne J. Dunstan, San Diego, CA (US);
ASML Netherlands B.V., Veldhoven, NL;
Abstract
Energy output from a laser-produced plasma (LPP) extreme ultraviolet light (EUV) system varies based on how well the laser beam is focused on droplets of target material to generate plasma at a primary focal spot. Maintaining droplets at the primary focal spot during burst firing is difficult because generated plasma from preceding droplets push succeeding droplets out of the primary focal spot. Current droplet-to-droplet feedback control to re-align droplets to the primary focal spot is relatively slow. The system and method described herein adaptively pre-compensate for droplet push-out by directing droplets to a target position that is offset from the primary focal spot such that when a droplet is lased, the droplet is pushed by the laser beam into the primary focal spot to generate plasma. Over time, the EUV system learns to maintain real-time alignment of droplet position so plasma is generated consistently within the primary focal spot.