The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 07, 2017
Filed:
Jul. 25, 2014
Applicant:
Thierry Sicard, Austin, TX (US);
Inventor:
Thierry Sicard, Austin, TX (US);
Assignee:
NXP USA, INC., Austin, TX (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G01R 31/02 (2006.01); G01R 31/26 (2014.01); G01R 35/00 (2006.01); H03K 17/082 (2006.01); H01L 29/739 (2006.01);
U.S. Cl.
CPC ...
G01R 31/2608 (2013.01); G01R 35/00 (2013.01); H01L 29/7393 (2013.01); H03K 17/0822 (2013.01); H03K 2217/0027 (2013.01);
Abstract
A saturation edge detection circuit for testing a saturation level in an insulated gate bipolar transistor ('IGBT') includes a first input operable to receive an on signal, a second input coupled to an IGBT driver circuit, and an output coupled to a control electrode of the IGBT. The output indicates a change in a state of a saturation voltage associated with the IGBT during operation of the IGBT.