The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 28, 2017

Filed:

Apr. 24, 2014
Applicant:

Media Lario S.r.l., Bosisio Parini, IT;

Inventors:

Natale M. Ceglio, Pleasanton, CA (US);

Daniel Stearns, Los Altos Hills, CA (US);

Richard Levesque, Livermore, CA (US);

Assignee:

Media Lario SRL, Bosisio Parini, IT;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H05G 2/00 (2006.01); G03F 7/20 (2006.01);
U.S. Cl.
CPC ...
H05G 2/005 (2013.01); G03F 7/70033 (2013.01); G03F 7/70916 (2013.01); H05G 2/006 (2013.01); H05G 2/008 (2013.01);
Abstract

A Sn vapor EUV LLP source system for EUV lithography is disclosed. The system generates a Sn vapor column from a supply of Sn liquid. The Sn column has a Sn-atom density of <10atoms/cmand travels at or near sonic speeds. The system also has a Sn vapor condenser arranged to receive the Sn vapor column and condense the Sn vapor to form recycled Sn liquid. A pulse laser irradiates a section of the Sn vapor column. Each pulse generates an under-dense Sn plasma having an electron density of <10electrons/cm, thereby allowing the under-dense Sn plasma substantially isotropically emit EUV radiation.


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