The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 28, 2017
Filed:
Oct. 08, 2013
Applicant:
Tsmc Solar Ltd., Taichung, TW;
Inventor:
Tzu-Huan Cheng, Kaohsiung, TW;
Assignee:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/0256 (2006.01); H01L 31/18 (2006.01); H01L 31/032 (2006.01); H01L 31/0749 (2012.01);
U.S. Cl.
CPC ...
H01L 31/0322 (2013.01); H01L 31/0323 (2013.01); H01L 31/0749 (2013.01); H01L 31/1864 (2013.01); Y02E 10/541 (2013.01); Y02P 70/521 (2015.11);
Abstract
A method of fabricating a photovoltaic device includes forming an absorber layer comprising an absorber material above a substrate, forming a buffer layer over the absorber layer, forming a front transparent layer over the buffer layer, and exposing the photovoltaic device to heat or radiation at a temperature from about 80° C. to about 500° C. for a period of time, subsequent to the step of forming a buffer layer over the absorber layer.