The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 28, 2017
Filed:
Nov. 25, 2015
Kabushiki Kaisha Toshiba, Minato-ku, JP;
Kabushiki Kaisha Toshiba, Minato-ku, JP;
Abstract
According to one embodiment, a first transistor includes a first semiconductor region, a second semiconductor region, a third semiconductor region, a first gate insulating film, and a first gate electrode. The first semiconductor region is provided in a first semiconductor layer extending in a second direction substantially perpendicular to the surface of the semiconductor substrate from the first line. The second semiconductor region is provided above the first semiconductor region in the first semiconductor layer. The third semiconductor region is provided above the second semiconductor region in the first semiconductor layer. The first gate insulating film covers a first side face of the first semiconductor layer. The first gate electrode covers the first side face of the first semiconductor layer through the first gate insulating film. The first transistor has an asymmetrical structure with respect to a center face of the second semiconductor region in the second direction.