The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 28, 2017
Filed:
Apr. 27, 2015
Pan-kwi Park, Incheon, KR;
Dong-suk Shin, Gyeonggi-Do, KR;
Seok-jun Won, Seoul, KR;
Weon-hong Kim, Suwon-si, KR;
Jae-gon Lee, Hwaseong-si, KR;
Pan-Kwi Park, Incheon, KR;
Dong-Suk Shin, Gyeonggi-Do, KR;
Seok-Jun Won, Seoul, KR;
Weon-Hong Kim, Suwon-si, KR;
Jae-Gon Lee, Hwaseong-si, KR;
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Abstract
In a method of manufacturing a semiconductor device, a dummy gate structure is formed on a substrate. A first spacer layer is formed on the substrate to cover the dummy gate structure. A nitridation process is performed on the first spacer layer. An upper portion of the substrate adjacent to the dummy gate structure is removed to form a trench. An inner wall of the trench is cleaned. An epitaxial layer is formed to fill the trench. The dummy gate structure is replaced with a gate structure.