The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 28, 2017
Filed:
Feb. 11, 2014
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Inventors:
Shu-Jenn Yu, Hsinchu, TW;
Meng-Wei Hsieh, Hsinchu, TW;
Shih-Hsien Yang, Zhubei, TW;
Hua-Chou Tseng, Hsinchu, TW;
Chih-Ping Chao, Hsinchu, TW;
Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 21/761 (2006.01); H01L 29/06 (2006.01); H01L 21/762 (2006.01); H01L 29/10 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0646 (2013.01); H01L 21/761 (2013.01); H01L 21/7624 (2013.01); H01L 29/0619 (2013.01); H01L 29/1087 (2013.01); H01L 29/66659 (2013.01); H01L 29/7835 (2013.01); H01L 29/665 (2013.01);
Abstract
A structure comprises a p-type substrate, a deep n-type well and a deep p-type well. The deep n-type well is adjacent to the p-type substrate and has a first conductive path to a first terminal. The deep p-type well is in the deep n-type well, is separated from the p-type substrate by the deep n-type well, and has a second conductive path to a second terminal. A first n-type well is over the deep p-type well. A first p-type well is over the deep p-type well.