The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 28, 2017

Filed:

Dec. 04, 2015
Applicants:

Patricio E. Romero, Portland, OR (US);

Scott B. Clendenning, Portland, OR (US);

Jeanette M. Roberts, Hillsboro, OR (US);

Florian Gstrein, Portland, OR (US);

Inventors:

Patricio E. Romero, Portland, OR (US);

Scott B. Clendenning, Portland, OR (US);

Jeanette M. Roberts, Hillsboro, OR (US);

Florian Gstrein, Portland, OR (US);

Assignee:

Intel Corporation, Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/768 (2006.01); H01L 21/285 (2006.01); C23C 16/04 (2006.01); C23C 16/18 (2006.01); C23C 16/455 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76897 (2013.01); C23C 16/04 (2013.01); C23C 16/18 (2013.01); C23C 16/45525 (2013.01); H01L 21/28506 (2013.01); H01L 21/28562 (2013.01); H01L 21/76801 (2013.01); H01L 21/76816 (2013.01); H01L 21/76838 (2013.01); H01L 21/76849 (2013.01); H01L 21/76879 (2013.01);
Abstract

Selective area deposition of metal films by atomic layer deposition (ALD) and chemical vapor deposition (CVD) is described. In an example, a method of fabricating a metallization structure for an integrated circuit involves forming an exposed surface above a substrate, the exposed surface including regions of exposed dielectric material and regions of exposed metal. The method also involves forming, using a selective metal deposition process, a metal layer on the regions of exposed metal without forming the metal layer on the regions of exposed dielectric material.


Find Patent Forward Citations

Loading…