The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 28, 2017
Filed:
Aug. 29, 2013
Applicant:
Micron Technology, Inc., Boise, ID (US);
Inventor:
Badih El-Kareh, Cedar Park, TX (US);
Assignee:
Micron Technology, Inc., Boise, ID (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/10 (2006.01); G11C 16/04 (2006.01); H01L 27/115 (2006.01); G11C 16/06 (2006.01); G11C 16/26 (2006.01);
U.S. Cl.
CPC ...
G11C 16/10 (2013.01); G11C 16/0408 (2013.01); G11C 16/0416 (2013.01); G11C 16/06 (2013.01); G11C 16/26 (2013.01); H01L 27/11521 (2013.01); H01L 27/11524 (2013.01);
Abstract
Memory cells and methods for programming and erasing a memory cell by utilizing a buried select line are described. A voltage potential may be generated between a source-drain region and the buried select line region of the memory cell to store charge in a storage region between the source-drain and buried select line regions. The generated voltage potential causes electrons to either tunnel towards the buried storage region to store electrical charge or away from the buried storage region to discharge electrical charge.