The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 28, 2017
Filed:
Feb. 25, 2012
Applicants:
Qiang Wu, Beijing, CN;
Yao Xu, Beijing, CN;
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 7/028 (2006.01); G03F 7/20 (2006.01); G03F 7/004 (2006.01); G03F 7/038 (2006.01); G03F 7/039 (2006.01);
U.S. Cl.
CPC ...
G03F 7/70466 (2013.01); G03F 7/0045 (2013.01); G03F 7/0046 (2013.01); G03F 7/0382 (2013.01); G03F 7/0392 (2013.01); G03F 7/203 (2013.01); G03F 7/2022 (2013.01); G03F 7/70575 (2013.01);
Abstract
A method for performing photolithography using a photo-resist is disclosed. The photo-resist comprises a first component and a second component. The method includes providing a substrate having a surface coated with the photo-resist and selectively illuminating a region of the surface of the photo-resist using light in a first wavelength band. The method further includes illuminating the entire surface of the photo-resist using light in a second wavelength band. The first and second wavelength bands are different and may not overlap. The method also includes performing a development process for the photo-resist upon illumination with the light of the first and second wavelength bands.