The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 28, 2017

Filed:

Jun. 29, 2013
Applicant:

Csmc Technologies Fab1 Co., Ltd., Jiangsu, CN;

Inventors:

Dan Dai, Jiangsu, CN;

Xinwei Zhang, Jiangsu, CN;

Guoping Zhou, Jiangsu, CN;

Changfeng Xia, Jiangsu, CN;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B81B 7/00 (2006.01); B81C 1/00 (2006.01);
U.S. Cl.
CPC ...
B81B 7/0029 (2013.01); B81C 1/0038 (2013.01); B81C 2201/053 (2013.01);
Abstract

A MEMS chip () includes a silicon substrate layer (), a first oxidation layer () and a first thin film layer (). The silicon substrate layer includes a front surface () for a MEMS process and a rear surface (), both the front surface and the rear surface being polished surfaces. The first oxidation layer is mainly made of silicon dioxide and is formed on the rear surface of the silicon substrate layer. The first thin film layer is mainly made of silicon nitride and is formed on the surface of the first oxidation layer. In the above MEMS chip, by sequentially laminating a first oxidation layer and a first thin film layer on the rear surface of a silicon substrate layer, the rear surface is effectively protected to prevent the scratch damage in the course of a MEMS process. A manufacturing method for the MEMS chip is also provided.


Find Patent Forward Citations

Loading…