The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 21, 2017
Filed:
Oct. 29, 2015
Applicant:
Sumitomo Electric Device Innovations, Inc., Yokohama-shi, JP;
Inventor:
Masami Ishiura, Yokohama, JP;
Assignee:
Sumitomo Electric Device Innovations, Inc., Yokohama-shi, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/00 (2010.01); H01L 33/10 (2010.01); H01S 5/227 (2006.01); H01S 5/0625 (2006.01); H01S 5/12 (2006.01); H01S 5/026 (2006.01); H01S 5/50 (2006.01);
U.S. Cl.
CPC ...
H01L 33/0062 (2013.01); H01L 33/10 (2013.01); H01S 5/0265 (2013.01); H01S 5/06258 (2013.01); H01S 5/1209 (2013.01); H01S 5/2275 (2013.01); H01S 5/0261 (2013.01); H01S 5/50 (2013.01);
Abstract
A method to produce a semiconductor laser diode (LD) including a sampled grating (SG) is disclosed. The method prepares various resist patterns each including grating regions and space regions alternately arranged along an optical axis. The grating regions and the space region in respective cavity types have total widths same with the others but the grating regions in respective types has widths different from others. After the formation of the grating patterns based on the resist patterns, only one of the grating patterns is used for subsequent processes.