The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 21, 2017
Filed:
Jan. 13, 2016
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
National Chiao Tung University, Hsinchu, TW;
Steve S. Chung, Hsinchu, TW;
E-Ray Hsieh, Kaohsiung, TW;
Yu-Bin Zhao, New Taipei, TW;
Samuel C. Pan, Hsinchu, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
National Chiao Tung University, Hsinchu, TW;
Abstract
Structures and formation methods of a semiconductor device structure are provided. The semiconductor device structure includes a source structure in a semiconductor substrate. The semiconductor device structure also includes a channel layer over the semiconductor substrate. A first portion of the channel layer covers a portion of the source structure. A second portion of the channel layer laterally extends away from the source structure. The semiconductor device structure further includes a drain structure over the semiconductor substrate. The drain structure and the source structure have different conductivity types. The drain structure adjoins the second portion of the channel layer.