The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 21, 2017
Filed:
Jun. 19, 2014
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Inventors:
Tsu-Hui Su, Taipei, TW;
Chih-Ming Chen, Hsinchu, TW;
Szu-Yu Wang, Hsinchu, TW;
Chung-Yi Yu, Hsin-Chu, TW;
Chia-Shiung Tsai, Hsin-Chu, TW;
Assignee:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/115 (2006.01); H01L 29/66 (2006.01); H01L 29/792 (2006.01); H01L 21/28 (2006.01); H01L 29/423 (2006.01); H01L 29/788 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66833 (2013.01); H01L 21/28273 (2013.01); H01L 21/28282 (2013.01); H01L 29/4234 (2013.01); H01L 29/42324 (2013.01); H01L 29/66825 (2013.01); H01L 29/7881 (2013.01); H01L 29/792 (2013.01);
Abstract
Some embodiments of the present disclosure relate to a method for forming flash memory. In this method, a first tunnel oxide is formed over a semiconductor substrate. A self-assembled monolayer (SAM) is then formed on the first tunnel oxide. The SAM includes spherical or spherical-like crystalline silicon dots having respective diameters which are less than approximately 30 nm. A second tunnel oxide is then formed over the SAM.