The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 21, 2017

Filed:

Jul. 10, 2015
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventors:

Martin F. Schubert, Boise, ID (US);

Vladimir Odnoblyudov, Eagle, ID (US);

Cem Basceri, Los Gatos, CA (US);

Thomas Gehrke, Boise, ID (US);

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/15 (2006.01); H01L 29/423 (2006.01); H01L 29/205 (2006.01); H01L 29/06 (2006.01); H01L 29/778 (2006.01); H01L 29/20 (2006.01); H01L 29/417 (2006.01);
U.S. Cl.
CPC ...
H01L 29/42316 (2013.01); H01L 29/0603 (2013.01); H01L 29/205 (2013.01); H01L 29/7786 (2013.01); H01L 29/7787 (2013.01); H01L 29/2003 (2013.01); H01L 29/4175 (2013.01); H01L 2224/16227 (2013.01);
Abstract

Semiconductor devices and methods for making semiconductor devices are disclosed herein. A method configured in accordance with a particular embodiment includes forming a stack of semiconductor materials from an epitaxial substrate, where the stack of semiconductor materials defines a heterojunction, and where the stack of semiconductor materials and the epitaxial substrate further define a bulk region that includes a portion of the semiconductor stack adjacent the epitaxial substrate. The method further includes attaching the stack of semiconductor materials to a carrier, where the carrier is configured to provide a signal path to the heterojunction. The method also includes exposing the bulk region by removing the epitaxial substrate.


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