The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 21, 2017
Filed:
Sep. 24, 2015
Epistar Corporation, Hsinchu, TW;
Ya-Yu Yang, Taichung, TW;
Ping-Hao Lin, Taichung, TW;
EPISTAR CORPORATION, Hsinchu, TW;
Abstract
Heterostructure field-effect transistor (HFET) having a channel layer, a barrier layer disposed on the channel layer, and a gate, source and drain electrodes disposed on the barrier layer, respectively, and corresponding fabrication methods are disclosed. The drain electrode includes a p-type semiconductor patterned structure and a raised drain section, the drain electrode includes a Schottky contact and an ohmic contact, the Schottky contact is formed between a top surface together with a side surface of p-type semiconductor patterned structure and a bottom surface together with a side surface of raised drain section, the ohmic contact is formed between another surface of raised drain section and barrier layer, the raised drain section partially surrounding the p-type semiconductor patterned structure, and a bandgap of the channel layer is less than a bandgap of the barrier layer.