The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 21, 2017
Filed:
Jan. 29, 2016
Yaoqi Dong, Suwon-si, KR;
Mun Hyeon Kim, Seoul, KR;
Keun Hwi Cho, Seoul, KR;
Shigenobu Maeda, Seongnam-si, KR;
Han Su OH, Yongin-si, KR;
Yaoqi Dong, Suwon-si, KR;
Mun Hyeon Kim, Seoul, KR;
Keun Hwi Cho, Seoul, KR;
Shigenobu Maeda, Seongnam-si, KR;
Han Su Oh, Yongin-si, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
Provided is a semiconductor device having first and second gate electrodes. The semiconductor device includes a substrate, an active region extending in a first direction on the substrate, a first gate electrode crossing the active region and extending in a second direction, and a second gate electrode extending in the second direction on the first gate electrode, wherein the first gate electrode has a first width in the first direction, and wherein the second gate electrode has a second width in the first direction, the second width being less than the first width.