The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 21, 2017
Filed:
Sep. 05, 2012
Jam-wem Lee, Zhubei, TW;
Wan-yen Lin, Kaohsiung, TW;
Ming-hsiang Song, Shin-Chu, TW;
Cheng-hsiung Kuo, Jubei, TW;
Yue-der Chih, Hsin-Chu, TW;
Jam-Wem Lee, Zhubei, TW;
Wan-Yen Lin, Kaohsiung, TW;
Ming-Hsiang Song, Shin-Chu, TW;
Cheng-Hsiung Kuo, Jubei, TW;
Yue-Der Chih, Hsin-Chu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
A P-type Metal-Oxide-Semiconductor Field Effect Transistor (PMOSFET) includes a gate, a first source/drain region connected to the gate, and a second source/drain region on an opposite side of the gate than the first source/drain region. A first Schottky diode includes a first anode connected to the first source/drain region, and a first cathode connected to a body of the PMOSFET. A second Schottky diode includes a second anode connected to the second source/drain region, and a second cathode connected to the body of the PMOSFET.