The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 21, 2017
Filed:
Apr. 14, 2015
Asm Ip Holding B.v., Almere, NL;
Viljami J. Pore, Helsinki, FI;
Yosuke Kimura, Tokyo, JP;
Kunitoshi Namba, Tokyo, JP;
Wataru Adachi, Kawasaki, JP;
Hideaki Fukuda, Tokyo, JP;
Werner Knaepen, Leuven, BE;
Dieter Pierreux, Dilbeek, BE;
Bert Jongbloed, Oud-Heverlee, BE;
ASM IP HOLDING B.V., Almere, NL;
Abstract
Methods of depositing boron and carbon containing films are provided. In some embodiments, methods of depositing B, C films with desirable properties, such as conformality and etch rate, are provided. One or more boron and/or carbon containing precursors can be decomposed on a substrate at a temperature of less than about 400° C. One or more of the boron and carbon containing films can have a thickness of less than about 30 angstroms. Methods of doping a semiconductor substrate are provided. Doping a semiconductor substrate can include depositing a boron and carbon film over the semiconductor substrate by exposing the substrate to a vapor phase boron precursor at a process temperature of about 300° C. to about 450° C., where the boron precursor includes boron, carbon and hydrogen, and annealing the boron and carbon film at a temperature of about 800° C. to about 1200° C.