The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 21, 2017
Filed:
Sep. 08, 2015
Applicant:
Kabushiki Kaisha Toshiba, Minato-ku, JP;
Inventors:
Assignee:
KABUSHIKI KAISHA TOSHIBA, Minato-ku, JP;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C 16/04 (2006.01); G11C 16/10 (2006.01); G11C 29/02 (2006.01);
U.S. Cl.
CPC ...
G11C 16/0483 (2013.01); G11C 16/10 (2013.01); G11C 29/025 (2013.01);
Abstract
A semiconductor memory device includes: a first string unit including first and second memory cell transistors; a second string unit including third and fourth memory cell transistors; a first word line coupled to gates of the first and third memory cell transistors; and a second word line coupled to gates of the second and fourth memory cell transistors. When the first string unit is selected and the first word line is selected, a first voltage is applied. The first voltage is larger than an initial value of the voltage in the step-up operation.