The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 21, 2017
Filed:
Feb. 25, 2016
Applicant:
Micron Technology, Inc., Boise, ID (US);
Inventor:
Xiaonan Chen, Boise, ID (US);
Assignee:
Micron Technology, Inc., Boise, ID (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/16 (2006.01); G11C 13/00 (2006.01); G11C 11/56 (2006.01);
U.S. Cl.
CPC ...
G11C 13/0069 (2013.01); G11C 11/5678 (2013.01); G11C 13/0004 (2013.01); G11C 2013/0092 (2013.01);
Abstract
Embodiments disclosed herein may relate to programming a memory cell with a programming pulse that comprises a quenching period having different portions. The memory cell may have more than two possible programmed states, where each programmed state of the memory cell includes a different fraction of amorphous material. A memory element may be melted and then quenched. The fraction of amorphous material, and thus the programmed state, may be controlled by selecting one of multiple quenching periods for the programming pulse.