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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9574287 B1

PDFFull Text
Date of Patent:
Feb. 21, 2017

Filed:

Sep. 26, 2013

Gallium nitride material and device deposition on graphene terminated wafer and method of forming the same

Applicant:

Globalfoundries Inc., Grand Cayman, KY;

Inventors:

Can Bayram, Ossining, NY (US);

Christos D. Dimitrakopoulos, Baldwin Place, NY (US);

Keith E. Fogel, Hopewell Junction, NY (US);

Jeehwan Kim, White Plains, NY (US);

John A. Ott, Greenwood Lake, NY (US);

Devendra K. Sadana, Pleasantville, NY (US);

Assignee:

GLOBALFOUNDRIES INC., Grand Cayman, KY;

Attorneys:

Yuanmin Cai

Hoffman Warnick, LLC

Primary Examiner:

Matthew Song

Int. Cl.
CPC ...
C30B 25/00 (2006.01); C30B 25/18 (2006.01); C30B 29/40 (2006.01); H01L 21/02 (2006.01); H01L 29/16 (2006.01); H01L 33/00 (2010.01); H01L 33/32 (2010.01); C30B 29/02 (2006.01); H01L 33/12 (2010.01);
U.S. Cl.
CPC ...
C30B 25/18 (2013.01); C30B 29/02 (2013.01); C30B 29/406 (2013.01); H01L 21/0254 (2013.01); H01L 29/1606 (2013.01); H01L 33/0025 (2013.01); H01L 33/32 (2013.01); C30B 25/183 (2013.01); H01L 33/0079 (2013.01); H01L 33/12 (2013.01);
Abstract

A method of forming an epitaxial semiconductor material that includes forming a graphene layer on a semiconductor and carbon containing substrate and depositing a metal containing monolayer on the graphene layer. An epitaxial layer of a gallium containing material is formed on the metal containing monolayer. A layered stack of the metal containing monolayer and the epitaxial layer of gallium containing material is cleaved from the graphene layer that is present on the semiconductor and carbon containing substrate.

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