The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 21, 2017
Filed:
May. 29, 2014
Freescale Semiconductor, Inc., Austin, TX (US);
NXP USA, Inc., Austin, TX (US);
Abstract
A MEMS device () includes a base structure () and a microstructure () suspended above the structure (). The base structure () includes an oxide layer () formed on a substrate (), a structural layer () formed on the oxide layer (), and an insulating layer () formed over the structural layer (). A sacrificial layer () is formed overlying the base structure (), and the microstructure () is formed in another structural layer () over the sacrificial layer (). Methodology () entails removing the sacrificial layer () and a portion of the oxide layer () to release the microstructure () and to expose a top surface () of the substrate (). Following removal, a width () of a gap () produced between the microstructure () and the top surface () is greater than a width () of a gap () produced between the microstructure () and the structural layer ().