The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 14, 2017
Filed:
Dec. 30, 2004
Applicants:
Sriram Srinivasan, Chander, AZ (US);
John S. Guzek, Chandler, AZ (US);
Cengiz A. Palanduz, Chandler, AZ (US);
Victor Prokofiev, Phoenix, AZ (US);
Joel A. Auernheimer, Phoenix, AZ (US);
Inventors:
Sriram Srinivasan, Chander, AZ (US);
John S. Guzek, Chandler, AZ (US);
Cengiz A. Palanduz, Chandler, AZ (US);
Victor Prokofiev, Phoenix, AZ (US);
Joel A. Auernheimer, Phoenix, AZ (US);
Assignee:
Intel Corporation, Santa Clara, CA (US);
Primary Examiner:
Int. Cl.
CPC ...
H05K 3/36 (2006.01); H05K 1/16 (2006.01); H01G 4/10 (2006.01); H01G 4/12 (2006.01); H01G 4/33 (2006.01); H05K 3/42 (2006.01); H05K 3/46 (2006.01);
U.S. Cl.
CPC ...
H05K 1/162 (2013.01); H01G 4/10 (2013.01); H01G 4/1209 (2013.01); H01G 4/33 (2013.01); H05K 3/429 (2013.01); H05K 3/4611 (2013.01); H05K 2201/0175 (2013.01); H05K 2201/0179 (2013.01); H05K 2201/09309 (2013.01); Y10T 29/43 (2015.01); Y10T 29/49147 (2015.01); Y10T 29/49155 (2015.01); Y10T 29/49165 (2015.01);
Abstract
Methods of forming a microelectronic structure are described. Embodiments of those methods include forming a substrate core by attaching a first dielectric layer to a second conductive layer of a thin film capacitor, and attaching a second dielectric layer to a first conductive layer of the thin film capacitor.