The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 14, 2017
Filed:
Dec. 09, 2015
Applicant:
Infineon Technologies Ag, Neubiberg, DE;
Inventors:
Frank Pfirsch, Munich, DE;
Dorothea Werber, Munich, DE;
Anton Mauder, Kolbermoor, DE;
Carsten Schaeffer, Annenheim, AT;
Assignee:
Infineon Technologies AG, Neubiberg, DE;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/739 (2006.01); H01L 29/732 (2006.01); H03K 17/12 (2006.01); H01L 29/40 (2006.01); H01L 29/06 (2006.01); H01L 29/08 (2006.01); H03K 3/01 (2006.01); H03K 17/66 (2006.01);
U.S. Cl.
CPC ...
H03K 17/127 (2013.01); H01L 29/0615 (2013.01); H01L 29/0619 (2013.01); H01L 29/0696 (2013.01); H01L 29/0834 (2013.01); H01L 29/404 (2013.01); H01L 29/407 (2013.01); H01L 29/7393 (2013.01); H01L 29/7395 (2013.01); H01L 29/7397 (2013.01); H03K 3/01 (2013.01); H03K 17/66 (2013.01);
Abstract
According to an embodiment of a method, a semiconductor device is operated in a reverse biased unipolar mode before operating the semiconductor device in an off-state in a forward biased mode. The semiconductor device includes at least one floating parasitic region disposed outside a cell region of the device.