The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 14, 2017
Filed:
Dec. 14, 2012
Dongping Wu, Shanghai, CN;
Chaochao Fu, Shanghai, CN;
Wei Zhang, Shanghai, CN;
Shi-li Zhang, Stockholm, SE;
Dongping Wu, Shanghai, CN;
Chaochao Fu, Shanghai, CN;
Wei Zhang, Shanghai, CN;
Shi-Li Zhang, Stockholm, SE;
FUDAN UNIVERSITY, Shanghai, CN;
Abstract
A SiGe HBT has an inverted heterojunction structure, where the emitter layer is formed prior to the base layer and the collector layer. The frequency performance of the SiGe HBT is significantly improved through a better thermal process budget for the base profile, essential for higher cut-off frequency (f) and a minimal collector-base area for a reduced parasitic capacitance, essential for higher maximum oscillation frequency (f). This inverted heterojunction structure can be fabricated by using ALE processes to form an emitter on a preformed epitaxial silicide, a base over the emitter and a collector over the base.