The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 14, 2017
Filed:
Aug. 12, 2016
Tong Lei, Shanghai, CN;
Junhua Yan, Shanghai, CN;
Tong Lei, Shanghai, CN;
Junhua Yan, Shanghai, CN;
SHANGHAI HUALI MICROELECTRONICS CORPORATION, Shanghai, CN;
Abstract
A method of planarizing a polysilicon gate are provided, comprising: growing a polysilicon gate layer on a substrate with trenches; depositing an oxide layer on the polysilicon gate layer; oxidizing the top portion of the polysilicon gate layer from the flat surface of the oxide layer, so as to form a silicon oxide interlayer in the top portion of the polysilicon gate layer; the bottom of the silicon oxide interlayer is aligned with or lower than the low-lying areas of surface of the polysilicon gate layer; removing the oxide layer and the silicon oxide interlayer, so as to obtain a flat surface of the polysilicon gate layer and avoid a series of problems resulted from the uneven surface in the subsequent processes.