The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 14, 2017
Filed:
Apr. 01, 2014
Applicant:
Infineon Technologies Ag, Neubiberg, DE;
Inventors:
Alexander Breymesser, Villach, AT;
Andre Brockmeier, Villach, AT;
Elmar Falck, Hohenbrunn, DE;
Francisco Javier Santos Rodriguez, Villach, AT;
Holger Schulze, Villach, AT;
Assignee:
Infineon Technologies AG, Neubiberg, DE;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 29/32 (2006.01); H01L 29/40 (2006.01); H01L 29/66 (2006.01); H01L 29/739 (2006.01); H01L 29/861 (2006.01); H01L 21/762 (2006.01); H01L 29/16 (2006.01); H01L 29/20 (2006.01); H01L 29/22 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0615 (2013.01); H01L 21/76224 (2013.01); H01L 29/0649 (2013.01); H01L 29/0661 (2013.01); H01L 29/32 (2013.01); H01L 29/402 (2013.01); H01L 29/66136 (2013.01); H01L 29/7395 (2013.01); H01L 29/8611 (2013.01); H01L 29/8613 (2013.01); H01L 29/1608 (2013.01); H01L 29/20 (2013.01); H01L 29/2203 (2013.01);
Abstract
A semiconductor device includes a semiconductor body with a first surface at a first side, a second surface opposite to the first surface and an edge surface connecting the first and second surfaces. An edge termination structure includes a glass structure and extends along the edge surface, at least from a plane coplanar with the first surface towards the second surface. A conductive structure extends parallel to the first surface and overlaps the glass structure at the first side.