The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 14, 2017

Filed:

Sep. 21, 2015
Applicant:

Infineon Technologies Ag, Neubiberg, DE;

Inventors:

Markus Zundel, Egmating, DE;

Vanessa Capodieci, Munich, DE;

Markus Dinkel, Unterhaching, DE;

Uwe Schmalzbauer, Siegertsbrunn, DE;

Assignee:

Infineon Technologies AG, Neubiberg, DE;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/02 (2006.01); H01L 23/48 (2006.01); H01L 23/58 (2006.01); H01L 21/66 (2006.01); H01L 29/40 (2006.01); H01L 29/78 (2006.01); H01L 23/00 (2006.01); G01R 31/26 (2014.01); H01L 27/088 (2006.01); H01L 29/06 (2006.01); H01L 23/13 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0207 (2013.01); G01R 31/26 (2013.01); H01L 22/34 (2013.01); H01L 23/48 (2013.01); H01L 23/562 (2013.01); H01L 23/58 (2013.01); H01L 23/585 (2013.01); H01L 27/088 (2013.01); H01L 29/0692 (2013.01); H01L 29/40 (2013.01); H01L 29/407 (2013.01); H01L 29/7811 (2013.01); H01L 29/7813 (2013.01); H01L 23/13 (2013.01); H01L 2924/0002 (2013.01);
Abstract

A semiconductor device includes a semiconductor substrate including a main surface with a polygonal geometry and a main electric circuit manufactured within a main region on the semiconductor substrate. The main electric circuit is operable to perform an electric main function. The main region extends over the main surface of the semiconductor substrate leaving open at least one corner area at a corner of the polygonal geometry of the main surface of the semiconductor substrate. The corner area extends at least 300 μm along the edges of the semiconductor substrate beginning at the corner.


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