The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 14, 2017
Filed:
Dec. 17, 2014
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Inventors:
Bo-Na Baek, Yongin-si, KR;
Seok-Won Lee, Seongnam-si, KR;
Eun-Seok Cho, Suwon-si, KR;
Dong-Han Kim, Osan-si, KR;
Kyoung-Sei Choi, Yongin-si, KR;
Sa-Yoon Kang, Seoul, KR;
Assignee:
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, Gyeonggi-Do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/373 (2006.01); H01L 23/538 (2006.01); H01L 23/14 (2006.01); H01L 23/522 (2006.01); H01L 23/498 (2006.01); H01L 23/00 (2006.01); H01L 25/10 (2006.01);
U.S. Cl.
CPC ...
H01L 23/5389 (2013.01); H01L 23/14 (2013.01); H01L 23/49816 (2013.01); H01L 23/49822 (2013.01); H01L 23/49827 (2013.01); H01L 23/5226 (2013.01); H01L 23/562 (2013.01); H01L 24/19 (2013.01); H01L 24/20 (2013.01); H01L 25/105 (2013.01); H01L 2224/04042 (2013.01); H01L 2224/04105 (2013.01); H01L 2224/12105 (2013.01); H01L 2224/18 (2013.01); H01L 2224/32245 (2013.01); H01L 2224/48091 (2013.01); H01L 2224/48227 (2013.01); H01L 2224/48235 (2013.01); H01L 2224/73253 (2013.01); H01L 2224/73267 (2013.01); H01L 2225/1035 (2013.01); H01L 2225/1041 (2013.01); H01L 2225/1058 (2013.01); H01L 2924/1431 (2013.01); H01L 2924/1434 (2013.01); H01L 2924/15311 (2013.01); H01L 2924/181 (2013.01);
Abstract
Provided is semiconductor package, including a semiconductor chip; an upper structure over the semiconductor chip, the upper structure having a first thermal expansion coefficient; and a lower structure under the semiconductor chip, the lower structure having a second thermal expansion coefficient of less than or equal to the first thermal expansion coefficient.