The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 14, 2017
Filed:
Jun. 21, 2013
Applicant:
Avantor Performance Materials, Inc., Center Valley, PA (US);
Inventor:
Glenn Westwood, Edison, NJ (US);
Assignee:
AVANTOR PERFORMANCE MATERIALS, LLC, Center Valley, PA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 21/461 (2006.01); H01L 21/768 (2006.01); H01L 21/02 (2006.01); H01L 21/67 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76814 (2013.01); H01L 21/02068 (2013.01); H01L 21/02101 (2013.01); H01L 21/67023 (2013.01); H01L 21/67028 (2013.01); H01L 2924/0002 (2013.01);
Abstract
The present invention is a new formulation and process for treating TiN semiconductor devices having a high aspect ratio structure formed thereon. The new composition is designed to be used in the chip making process between cleaning a wet etched memory device and its final rinse/drying process. It is intended to include the treatment in order to prevent collapse of the high aspect ratio TiN structure found on the semiconductor device.