The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 14, 2017
Filed:
Mar. 18, 2015
Applicant:
United Microelectronics Corporation, Hsinchu, TW;
Inventors:
Chueh-Yang Liu, Tainan, TW;
Yi-Liang Ye, Kaohsiung, TW;
Ted Ming-Lang Guo, Tainan, TW;
Yu-Ren Wang, Tainan, TW;
Assignee:
UNITED MICROELECTRONICS CORPORATION, Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/311 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 21/31111 (2013.01); H01L 21/0206 (2013.01); H01L 21/02238 (2013.01);
Abstract
A method of an interfacial oxide layer formation comprises a plurality of steps. The step (S) is to remove a native oxide layer from a surface of a substrate; the step (S) is to form an oxide layer on a surface of a substrate by piranha solution (SPM); the step (S) is to cleaning a surface of the oxide layer by standard clean 1 (SC1), and the step (S) is to etch he oxide layer by a solution comprising diluted hydrogen fluoride (dHF) and ozonized pure water (DIO3).