The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 14, 2017
Filed:
Dec. 14, 2015
Applicant:
SK Hynix Inc., Gyeonggi-do, KR;
Inventors:
Jae-Chun Cha, Gyeonggi-do, KR;
Seung-Woo Jin, Gyeonggi-do, KR;
An-Bae Lee, Gyeonggi-do, KR;
Il-Sik Jang, Gyeonggi-do, KR;
Assignee:
SK Hynix Inc., Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/265 (2006.01); H01L 29/66 (2006.01); H01L 21/8238 (2006.01); H01L 29/78 (2006.01); H01L 29/08 (2006.01); H01L 29/10 (2006.01); H01L 29/167 (2006.01);
U.S. Cl.
CPC ...
H01L 21/26593 (2013.01); H01L 21/26513 (2013.01); H01L 21/823807 (2013.01); H01L 21/823814 (2013.01); H01L 29/0847 (2013.01); H01L 29/1033 (2013.01); H01L 29/167 (2013.01); H01L 29/6659 (2013.01); H01L 29/66522 (2013.01); H01L 29/66568 (2013.01); H01L 29/7833 (2013.01); H01L 21/2658 (2013.01); H01L 29/665 (2013.01);
Abstract
A method for fabricating a semiconductor device includes: implanting a first species into a substrate at a cold temperature to form a first region; and implanting a second species into the substrate at a hot temperature to form a second region that is adjacent to the first region.