The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 14, 2017
Filed:
May. 29, 2014
Applicants:
National Taiwan University, Taipei, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Inventors:
Assignees:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
National Taiwan University, Taipei, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 21/027 (2006.01); H01L 21/033 (2006.01); G03F 7/20 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0274 (2013.01); G03F 7/2039 (2013.01); G03F 7/2045 (2013.01); H01L 21/0278 (2013.01); H01L 21/0279 (2013.01); H01L 21/0337 (2013.01);
Abstract
A process for fabricating an integrated circuit is provided. The process includes providing a substrate and forming a hard mask on the substrate. The hard mask may be formed by atomic-layer deposition (ALD) or molecular-layer deposition (MLD). The process also includes disposing an exposure mask over the hard mask and exposing the exposure mask to a patterning particle to pattern a gap in the hard mask. The patterning particle may be, for example, a photon or a charged particle.