The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 07, 2017

Filed:

Feb. 03, 2015
Applicant:

Omnivision Technologies, Inc., Santa Clara, CA (US);

Inventors:

Gang Chen, San Jose, CA (US);

Dominic Massetti, San Jose, CA (US);

Chih-Wei Hsiung, San Jose, CA (US);

Arvind Kumar, Fremont, CA (US);

Yuanwei Zheng, San Jose, CA (US);

Duli Mao, Sunnyvale, CA (US);

Dyson H. Tai, San Jose, CA (US);

Assignee:

OmniVision Technologies, Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H04N 9/04 (2006.01); H01L 27/146 (2006.01); H04N 5/3745 (2011.01);
U.S. Cl.
CPC ...
H04N 9/045 (2013.01); H01L 27/1464 (2013.01); H01L 27/14641 (2013.01); H01L 27/14647 (2013.01); H04N 5/37457 (2013.01); H01L 27/14627 (2013.01);
Abstract

A back side illuminated image sensor includes a pixel array including semiconductor material, and image sensor circuitry disposed on a front side of the semiconductor material to control operation of the pixel array. A first pixel includes a first doped region disposed proximate to a back side of the semiconductor material and extends into the semiconductor material a first depth to reach the image sensor circuitry. A second pixel with a second doped region is disposed proximate to the back side of the semiconductor material and extends into the semiconductor material a second depth which is less than the first depth. A third doped region is disposed between the second doped region and the image sensor circuitry on the front side of the semiconductor material. The third doped region is electrically isolated from the first doped region and the second doped region.


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