The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 07, 2017
Filed:
Dec. 30, 2014
Globalfoundries Singapore Pte. Ltd., Singapore, SG;
Danny Pak-Chum Shum, Singapore, SG;
Hai Cong, Singapore, SG;
Yi Jiang, Singapore, SG;
Juan Boon Tan, Singapore, SG;
GLOBALFOUNDRIES SINGAPORE PTE. LTD., Singapore, SG;
Abstract
Integrated circuits with magnetic random access memory (MRAM) and dual encapsulation for double magnesium oxide tunnel barrier structures and methods for fabricating the same are disclosed herein. As an illustration, an integrated circuit includes a magnetic random access memory structure that includes a bottom electrode that has a bottom electrode width and has bottom electrode sidewalls and a fixed layer overlying the bottom electrode that has a fixed layer width that is substantially equal to the bottom electrode width and has fixed layer sidewalls. The MRAM structure of the integrated circuit further includes a free layer overlying a central area of the fixed layer. Still further, the MRAM structure of the integrated circuit includes a first encapsulation layer disposed along the free layer sidewalls and a second encapsulation layer disposed along the bottom electrode sidewalls and the fixed layer sidewalls.