The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 07, 2017
Filed:
Apr. 22, 2014
Taiwan Semiconductor Manufacturing Company Limited, Hsinchu, TW;
Chih-Hsiung Lin, Hsinchu County, TW;
Chia-Der Chang, Hsinchu, TW;
Jung-Ting Chen, Hsinchu County, TW;
Tai-Yuan Wang, New Taipei, TW;
Taiwan Semiconductor Manufacturing Company Limited, Hsinchu, TW;
Abstract
A method of fabricating a MOSFET with an undoped channel is disclosed. The method comprises fabricating on a substrate a semiconductor structure having a dummy poly gate, dummy interlayer (IL) oxide, and a doped channel. The method further comprises removing the dummy poly gate and the dummy IL oxide to expose the doped channel, removing the doped channel from an area on the substrate, forming an undoped channel for the semiconductor structure at the area on the substrate, and forming a metal gate for the semiconductor structure. Removing the dummy poly gate may comprise dry and wet etch operations. Removing the dummy IL oxide may comprise dry etch operations. Removing the doped channel may comprise anisotropic etch operations on the substrate. Forming an undoped channel may comprise applying an epitaxial process to grow the undoped channel. The method may further comprise growing IL oxide above the undoped channel.