The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 07, 2017
Filed:
Jan. 22, 2016
United Microelectronics Corp., Hsin-Chu, TW;
Yu-Cheng Lin, Tainan, TW;
Hui-Shen Shih, Changhua County, TW;
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Abstract
A semiconductor device is disclosed. The semiconductor device includes: a substrate; a first tensile dielectric layer on the substrate; a metal gate in the first tensile dielectric layer; a second tensile dielectric layer on the first tensile dielectric layer; and a contact plug in the first tensile dielectric layer and the second tensile dielectric layer. Preferably, the top surface of the contact plug is even with the top surface of the second tensile dielectric layer, and a carbon content of the second tensile dielectric layer is greater than the carbon content of the first tensile dielectric layer.