logo

For the Inventor, By the Inventor

The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9564504 B1

PDFFull Text
Date of Patent:
Feb. 07, 2017

Filed:

Feb. 03, 2016

Semiconductor device and method of manufacturing semiconductor device

Applicant:

Sumitomo Electric Device Innovations, Inc., Yokohama-shi, JP;

Inventor:

Masahiro Nishi, Yokohama, JP;

Assignee:

Sumitomo Electric Device Innovations, Inc., Yokohama-shi, JP;

Attorneys:

Venable LLP

Michael A. Sartori

Laura G. Remus

Primary Examiner:

Telly Green

Int. Cl.
CPC ...
H01L 21/338 (2006.01); H01L 29/45 (2006.01); H01L 21/285 (2006.01); H01L 29/417 (2006.01); H01L 29/423 (2006.01); H01L 29/66 (2006.01); H01L 29/20 (2006.01); H01L 21/02 (2006.01); H01L 21/283 (2006.01); H01L 21/306 (2006.01); H01L 21/324 (2006.01); H01L 21/3213 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H01L 29/452 (2013.01); H01L 21/02389 (2013.01); H01L 21/283 (2013.01); H01L 21/28575 (2013.01); H01L 21/28587 (2013.01); H01L 21/30604 (2013.01); H01L 21/324 (2013.01); H01L 21/3245 (2013.01); H01L 21/32133 (2013.01); H01L 21/768 (2013.01); H01L 29/2003 (2013.01); H01L 29/41733 (2013.01); H01L 29/42312 (2013.01); H01L 29/66462 (2013.01);
Abstract

A manufacturing method according to an embodiment of this invention is a method of manufacturing a semiconductor device, which has: a first step of forming a first electrodecontaining Ti or Ta on a top face of a nitride semiconductor layer; a second step of forming a second electrodecontaining Al on a top face of the first electrode; a third step of forming a coating metal layercovering at least one of an edge of a top face of the second electrodeand a side face of the second electrode, having a windowexposing the top face of the second electrodein a region separated from the foregoing edge, and containing at least one of Ta, Mo, Pd, Ni, and Ti; and a step of performing a thermal treatment, after the third step.

Find Patent Forward Citations

Loading…