The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 07, 2017

Filed:

Oct. 08, 2014
Applicant:

Monolithic 3d Inc., San Jose, CA (US);

Inventors:

Zvi Or-Bach, San Jose, CA (US);

Deepak C. Sekar, San Jose, CA (US);

Brian Cronquist, San Jose, CA (US);

Israel Beinglass, Sunnyvale, CA (US);

Jan Lodewijk de Jong, Cupertino, CA (US);

Assignee:

MONOLITHIC 3D INC., San Jose, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/088 (2006.01); G11C 17/14 (2006.01); H01L 21/762 (2006.01); H01L 21/822 (2006.01); H01L 21/84 (2006.01); H01L 23/525 (2006.01); H01L 23/544 (2006.01); H01L 25/065 (2006.01); H01L 25/18 (2006.01); H01L 27/02 (2006.01); H01L 27/06 (2006.01); H01L 27/092 (2006.01); H01L 27/105 (2006.01); H01L 27/108 (2006.01); H01L 27/11 (2006.01); H01L 27/112 (2006.01); H01L 27/118 (2006.01); H03K 17/687 (2006.01); H03K 19/0948 (2006.01); H03K 19/177 (2006.01); H01L 21/8226 (2006.01); H01L 23/48 (2006.01); H01L 23/528 (2006.01); H01L 23/532 (2006.01); H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
H01L 27/088 (2013.01); G11C 17/14 (2013.01); H01L 21/76254 (2013.01); H01L 21/8221 (2013.01); H01L 21/8226 (2013.01); H01L 21/84 (2013.01); H01L 23/481 (2013.01); H01L 23/528 (2013.01); H01L 23/5252 (2013.01); H01L 23/53214 (2013.01); H01L 23/53228 (2013.01); H01L 23/544 (2013.01); H01L 24/14 (2013.01); H01L 25/0657 (2013.01); H01L 25/18 (2013.01); H01L 27/0207 (2013.01); H01L 27/0688 (2013.01); H01L 27/0694 (2013.01); H01L 27/092 (2013.01); H01L 27/105 (2013.01); H01L 27/10873 (2013.01); H01L 27/10876 (2013.01); H01L 27/10897 (2013.01); H01L 27/11 (2013.01); H01L 27/112 (2013.01); H01L 27/11206 (2013.01); H01L 27/11803 (2013.01); H03K 17/687 (2013.01); H03K 19/0948 (2013.01); H03K 19/177 (2013.01); H01L 24/45 (2013.01); H01L 24/48 (2013.01); H01L 27/1108 (2013.01); H01L 2223/5442 (2013.01); H01L 2223/54426 (2013.01); H01L 2223/54453 (2013.01); H01L 2224/32145 (2013.01); H01L 2224/45124 (2013.01); H01L 2224/45147 (2013.01); H01L 2224/48091 (2013.01); H01L 2224/73265 (2013.01); H01L 2225/06513 (2013.01); H01L 2225/06517 (2013.01); H01L 2225/06527 (2013.01); H01L 2225/06541 (2013.01); H01L 2225/06589 (2013.01); H01L 2924/00011 (2013.01); H01L 2924/00014 (2013.01); H01L 2924/01019 (2013.01); H01L 2924/01066 (2013.01); H01L 2924/01322 (2013.01); H01L 2924/10253 (2013.01); H01L 2924/12032 (2013.01); H01L 2924/12036 (2013.01); H01L 2924/12042 (2013.01); H01L 2924/1301 (2013.01); H01L 2924/1305 (2013.01); H01L 2924/13062 (2013.01); H01L 2924/13091 (2013.01); H01L 2924/14 (2013.01); H01L 2924/15788 (2013.01); H01L 2924/181 (2013.01); H01L 2924/3011 (2013.01); H01L 2924/3025 (2013.01);
Abstract

A semiconductor device, including: a first layer including monocrystalline material and first transistors, the first transistors overlaid by a first isolation layer; a second layer including second transistors and overlaying the first isolation layer, the second transistors including a monocrystalline material; where the second layer includes at least one through layer via to provide connection between at least one of the second transistors and at least one of the first transistors, where the at least one through layer via has a diameter of less than 200 nm; a first set of external connections underlying the first layer to connect the device to external devices; and a second set of external connections overlying the second layer to connect the device to external devices.


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