The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 07, 2017

Filed:

Jun. 22, 2015
Applicant:

Ziptronix, Inc., Raleigh, NC (US);

Inventors:

Paul M. Enquist, Cary, NC (US);

Gaius Gillman Fountain, Jr., Youngsville, NC (US);

Assignee:

ZIPTRONIX, INC., San Jose, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/58 (2006.01); H01L 21/304 (2006.01); H01L 23/00 (2006.01); H01L 21/20 (2006.01); H01L 21/683 (2006.01); H01L 21/768 (2006.01); H01L 21/822 (2006.01); H01L 23/13 (2006.01); H01L 23/36 (2006.01); H01L 23/48 (2006.01); H01L 23/538 (2006.01); H01L 25/065 (2006.01); H01L 25/16 (2006.01); H01L 25/00 (2006.01); H01L 27/06 (2006.01); H01L 21/762 (2006.01); H01L 21/18 (2006.01); H01L 23/552 (2006.01); H01L 25/18 (2006.01); H01L 27/146 (2006.01);
U.S. Cl.
CPC ...
H01L 24/83 (2013.01); H01L 21/2007 (2013.01); H01L 21/6835 (2013.01); H01L 21/76898 (2013.01); H01L 21/8221 (2013.01); H01L 23/13 (2013.01); H01L 23/36 (2013.01); H01L 23/481 (2013.01); H01L 23/5384 (2013.01); H01L 23/5385 (2013.01); H01L 23/5389 (2013.01); H01L 24/24 (2013.01); H01L 24/26 (2013.01); H01L 24/27 (2013.01); H01L 24/30 (2013.01); H01L 24/80 (2013.01); H01L 24/82 (2013.01); H01L 24/94 (2013.01); H01L 25/0652 (2013.01); H01L 25/0655 (2013.01); H01L 25/0657 (2013.01); H01L 25/16 (2013.01); H01L 25/167 (2013.01); H01L 25/50 (2013.01); H01L 27/0688 (2013.01); H01L 21/187 (2013.01); H01L 21/76251 (2013.01); H01L 23/552 (2013.01); H01L 24/48 (2013.01); H01L 25/18 (2013.01); H01L 27/14634 (2013.01); H01L 2221/6835 (2013.01); H01L 2221/68359 (2013.01); H01L 2221/68363 (2013.01); H01L 2223/6677 (2013.01); H01L 2224/1134 (2013.01); H01L 2224/16 (2013.01); H01L 2224/24011 (2013.01); H01L 2224/24225 (2013.01); H01L 2224/24226 (2013.01); H01L 2224/24227 (2013.01); H01L 2224/305 (2013.01); H01L 2224/3005 (2013.01); H01L 2224/30104 (2013.01); H01L 2224/48091 (2013.01); H01L 2224/48101 (2013.01); H01L 2224/48227 (2013.01); H01L 2224/48247 (2013.01); H01L 2224/80896 (2013.01); H01L 2224/81894 (2013.01); H01L 2224/8303 (2013.01); H01L 2224/8319 (2013.01); H01L 2224/8385 (2013.01); H01L 2224/83092 (2013.01); H01L 2224/83099 (2013.01); H01L 2224/83193 (2013.01); H01L 2224/83359 (2013.01); H01L 2224/83894 (2013.01); H01L 2224/83896 (2013.01); H01L 2224/9202 (2013.01); H01L 2225/06513 (2013.01); H01L 2225/06524 (2013.01); H01L 2225/06541 (2013.01); H01L 2225/06555 (2013.01); H01L 2225/06589 (2013.01); H01L 2924/00013 (2013.01); H01L 2924/014 (2013.01); H01L 2924/01005 (2013.01); H01L 2924/01006 (2013.01); H01L 2924/01015 (2013.01); H01L 2924/01029 (2013.01); H01L 2924/0132 (2013.01); H01L 2924/01033 (2013.01); H01L 2924/01047 (2013.01); H01L 2924/01057 (2013.01); H01L 2924/01074 (2013.01); H01L 2924/01082 (2013.01); H01L 2924/05442 (2013.01); H01L 2924/07802 (2013.01); H01L 2924/10253 (2013.01); H01L 2924/10329 (2013.01); H01L 2924/1305 (2013.01); H01L 2924/13062 (2013.01); H01L 2924/13063 (2013.01); H01L 2924/13064 (2013.01); H01L 2924/13091 (2013.01); H01L 2924/14 (2013.01); H01L 2924/1461 (2013.01); H01L 2924/15153 (2013.01); H01L 2924/15165 (2013.01); H01L 2924/19041 (2013.01); H01L 2924/19043 (2013.01); H01L 2924/3011 (2013.01); H01L 2924/3025 (2013.01); H01L 2924/30105 (2013.01); H01L 2924/30107 (2013.01); H01L 2924/351 (2013.01); Y10S 148/012 (2013.01); Y10S 438/977 (2013.01);
Abstract

A device integration method and integrated device. The method may include the steps of directly bonding a semiconductor device having a substrate to an element; and removing a portion of the substrate to expose a remaining portion of the semiconductor device after bonding. The element may include one of a substrate used for thermal spreading, impedance matching or for RF isolation, an antenna, and a matching network comprised of passive elements. A second thermal spreading substrate may be bonded to the remaining portion of the semiconductor device. Interconnections may be made through the first or second substrates. The method may also include bonding a plurality of semiconductor devices to an element, and the element may have recesses in which the semiconductor devices are disposed. A conductor array having a plurality of contact structures may be formed on an exposed surface of the semiconductor device, vias may be formed through the semiconductor device to device regions, and interconnection may be formed between said device regions and said contact structures.


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