The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 07, 2017
Filed:
Jan. 24, 2014
Taiwan Semiconductor Manufacturing Company Limited, Hsin-Chu, TW;
Fang-I Chih, Tainan, TW;
Yen-Chang Chao, Taichung, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LIMITED, Hsin-Chu, TW;
Abstract
A semiconductor device and method of formation are provided. A semiconductor device includes a first material comprising STI adjacent a fin. The STI is substantially uniform, such that a top surface of the STI has few to no defects and little to no concavity. To form the STI, the first material is implanted with a dopant, which forms an etch stop layer, such that the first material height is reduced by etching rather than CMP. Etching results in a better uniformity of the first material than CMP. STI that is substantially uniform comprises a better current barrier between adjacent fins than a device that comprises STI that is not substantially uniform.